Semiconductor device and a method of manufacturing the same,...

Details Semiconductor device and a method of manufacturing the same,... Semiconductor device and a method of manufacturing the same,...

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S621000, C257S622000, C257S667000, C257S680000, C257S774000, C174S255000

Reexamination Certificate

active

06873054

ABSTRACT:
A through hole tapered from an opening to the in-depth direction is formed in a semiconductor substrate provided with an integrated circuit. An insulating material is supplied to the through hole through the opening so as to form an insulating layer on the inner surface of the through hole. A conductive material is supplied through the opening to the through hole provided with the insulating layer so as to form a conductive portion inside the insulating layer.

REFERENCES:
patent: 6693358 (2004-02-01), Yamada et al.
patent: 20010023779 (2001-09-01), Sugaya et al.
patent: 20020084513 (2002-07-01), Siniaguine
Siniaguine, Integrated circuits and methods for their fabrication, Jul. 4, 2002, Pub. No. US 2002/0084513.*
Sugaya et al., Transfer material, method for producing the same and wiring substrate produced by using the same, Sep. 27, 2001, Pub. No. US 2001/0023779.

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