Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-03-11
2008-03-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S698000, C257S781000, C257SE23020
Reexamination Certificate
active
07342302
ABSTRACT:
A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.
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Ebata Yutaro
Fujishima Koji
Fukayama Yoshio
Higuchi Kazuhisa
Kanaoka Taku
Hitachi ULSI Systems Co. Ltd.
Mandala Jr. Victor A.
Miles & Stockbridge P.C.
Pert Evan
Renesas Technology Corp.
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