Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2011-08-09
2011-08-09
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C438S275000, C257SE29049
Reexamination Certificate
active
07994603
ABSTRACT:
Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
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Japanese Patent Office Action corresponding to JP2007-179387 dated Jun. 30, 2009.
Hagimoto Yoshiya
Hirano Tomoyuki
Kataoka Toyotaka
Wang Junli
Booth Richard A.
SNR Denton US LLP
Sony Corporation
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