Semiconductor device and a method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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Details

257388, 257412, 257632, 257647, 438151, 438738, H01L 2972

Patent

active

060607653

ABSTRACT:
A semiconductor device is provided which is improved to be capable of stably forming a contact hole. A stopper film is provided on a gate electrode. An interlayer insulating film is provided on a semiconductor substrate to cover the gate electrode. The interlayer insulating film and the stopper film are penetrated by a first contact hole which exposes a surface of the gate electrode. The interlayer insulating film is provided with a second contact hole for exposing a surface of an impurity diffusion layer. The stopper film is formed of a material higher in etch selectivity than the interlayer insulating film.

REFERENCES:
patent: 5631484 (1997-05-01), Tsoi et al.

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