Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-07-08
2000-05-09
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257388, 257412, 257632, 257647, 438151, 438738, H01L 2972
Patent
active
060607653
ABSTRACT:
A semiconductor device is provided which is improved to be capable of stably forming a contact hole. A stopper film is provided on a gate electrode. An interlayer insulating film is provided on a semiconductor substrate to cover the gate electrode. The interlayer insulating film and the stopper film are penetrated by a first contact hole which exposes a surface of the gate electrode. The interlayer insulating film is provided with a second contact hole for exposing a surface of an impurity diffusion layer. The stopper film is formed of a material higher in etch selectivity than the interlayer insulating film.
REFERENCES:
patent: 5631484 (1997-05-01), Tsoi et al.
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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