Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2010-04-30

2011-12-27

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

With electrical circuit layout

C438S128000, C438S257000, C438S599000, C257SE21179, C257SE21422, C257SE21680

Reexamination Certificate

active

08084303

ABSTRACT:
In a memory cell array on a main surface of a semiconductor substrate, a floating gate electrode for accumulating charges for information is arranged. The floating gate electrode is covered with a cap insulating film and a pattern of an first insulating film formed thereon. Further, over the entire main surface of the semiconductor substrate, an second insulating film is deposited so that it covers the pattern of the first insulating film and a gate electrode. The second insulating film is formed by a silicon nitride film formed by a plasma CVD method. The first insulating film is formed by a silicon nitride film formed by a low-pressure CVD method. By the provision of such an first insulating film, it is possible to suppress or prevent water or hydrogen ions from diffusing to the floating gate electrode, and therefore, the data retention characteristics of a flash memory can be improved.

REFERENCES:
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patent: 2007/0058441 (2007-03-01), Oka et al.
patent: 2007/0210388 (2007-09-01), Shiba
patent: 2008/0211001 (2008-09-01), Shiba et al.
patent: 2009/0093096 (2009-04-01), Shiba
patent: 2002-16249 (2002-01-01), None
patent: 2007-110073 (2007-04-01), None
patent: WO 2005/101519 (2005-10-01), None

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