Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2009-01-12
2010-10-12
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C438S614000, C257SE21575, C257SE23145
Reexamination Certificate
active
07812456
ABSTRACT:
A semiconductor device having redistribution interconnects in the WPP technology and improved reliability, wherein the redistribution interconnects have first patterns and second patterns which are electrically separated from each other within the plane of the semiconductor substrate, the first patterns electrically coupled to the multi-layer interconnects and the floating second patterns are coexistent within the plane of the semiconductor substrate, and the occupation ratio of the total of the first patterns and the second patterns within the plane of the semiconductor substrate, that is, the occupation ratio of the redistribution interconnects is 35 to 60%.
REFERENCES:
patent: 6277669 (2001-08-01), Kung et al.
patent: 09-306914 (1997-11-01), None
Koide Yuki
Minami Masataka
Hoang Quoc D
Miles & Stockbridge P.C.
Renesas Electronics Corporation
LandOfFree
Semiconductor device and a method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4230444