Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

1997-10-29

2000-09-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257384, 257752, 257757, 257768, H01L 2972

Patent

active

061246387

ABSTRACT:
A polycide wiring layer constituted by a polysilicon film and a silicide film is used as a bit line of a DRAM. When a memory cell region having an n-type impurity diffusion layer and a peripheral circuit region having a p-type impurity diffusion layer are to be electrically connected through the polysilicon film, a diffusion prevention film consisting of TiSiN or WSiN is formed as an underlying film of the polysilicon film. With this diffusion prevention film, interdiffusion between the n- and p-type impurity diffusion layers can be prevented. In addition, heat resistance at 900.degree. C. or more can be obtained in processes after formation of the diffusion prevention film.

REFERENCES:
patent: 5907188 (1999-05-01), Nakajima et al.

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