Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2008-06-12
2009-11-10
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S758000
Reexamination Certificate
active
07615848
ABSTRACT:
A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.
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Hotta Katsuhiko
Sahara Masashi
Sato Kazuhiko
Suwanai Naokatsu
Tachigami Atsushi
Antonelli, Terry Stout & Kraus, LLP.
Hitachi ULSI Systems Co. Ltd.
Renesas Technology Corp.
Smith Bradley K
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