Semiconductor device and a method of manufacturing the same

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C438S109000, C438S110000, C438S153000, C438S149000, C438S151000, C438S164000, C257S059000, C257S072000, C257S079000, C257S347000, C257S686000, C257S723000

Reexamination Certificate

active

07579214

ABSTRACT:
To form a driver circuit to be mounted to a liquid crystal display device or the like on a glass substrate, a quartz substrate, etc., and to provide a display device mounting driver circuits formed from different TFTs suited for their respective operational characteristics. A stick driver circuit on the scanning line side and a stick driver circuit on the data line side are different in structure, and have different TFTs in which the thickness of a gate insulating film, the channel length and other parameters are varied depending on required circuit characteristics. In the stick driver on the scanning line side, which is composed of a shift register circuit, a level shifter circuit, and a buffer circuit, the buffer circuit has a TFT with a thick gate insulating film because it is required to have a withstand voltage of 30 V. The stick driver circuit on the data line side, which is composed of a shift register circuit, a latch circuit, a level shifter circuit, and a D/A converter circuit, is driven at a high frequency, and hence its shift register circuit and latch circuit have thin gate insulating films and the channel length thereof is shorter than that of the TFT of the buffer circuit.

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