Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-01-26
2009-08-18
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C365S163000, C257SE31029, C438S281000
Reexamination Certificate
active
07575950
ABSTRACT:
A semiconductor device having improved performance and improvement manufacturing yield is provided. After a semiconductor integrated circuit including a phase change memory and a nonvolatile memory other than a phase change memory is formed in a semiconductor substrate, an inspection step such as a probe inspection is performed. In accordance with the result of the inspection, data is stored in the nonvolatile memory other than a phase change memory. At this stage, the data is not stored in the phase change memory. Then, the semiconductor substrate is cut by dicing or the like into separate pieces corresponding to individual semiconductor chips. Each of the separate pieces of semiconductor chips is packaged.
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Burcin, L.;Ramaswamy, S.; Hunt, K.; Maimon, J.; Conway,, T.; Li, B.; Bumgarner, A.; Michael, G.; Rodgers, J. “A 4-bit Non-Volatile Chalogenide Random Access Memory”, IEEE, Aerospace Conference, Mar. 5-12, 2005, pp. 1-8.
Antonelli, Terry Stout & Kraus, LLP.
Coleman W. David
Renesas Technology Corp.
Scarlett Shaka
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