Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

1981-10-28

1985-02-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29576E, 29577R, 148 15, 148188, 357 43, 357 59, H01L 2978, H01L 21225

Patent

active

044971060

ABSTRACT:
A semiconductor device comprising at least one bipolar transistor and at least one MIS FET integrated in a single semiconductor substrate, has an electrode for each region of the bipolar transistor and the MIS FET. Each electrode has the same conductivity type as the corresponding region and is connected to ohmic contact with the surface of the corresponding region.

REFERENCES:
patent: 4120707 (1978-10-01), Beasom
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4233615 (1980-11-01), Takemoto et al.
IBM Technical Disclosure Bulletin, "NPN N-Channel Bipolar FET Devices", vol. 17, No. 10, Mar. 1975, pp. 2935-2936.
Patent Abstracts of Japan, vol. 5, No. 55, Apr. 16, 1981, (JP-A-56-007462).

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