Fishing – trapping – and vermin destroying
Patent
1988-01-25
1989-11-07
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 32, 437 33, 437150, 437162, 148DIG10, 148DIG11, 148DIG123, 148DIG124, 357 34, 357 35, 357 59, 156628, H01L 21265
Patent
active
048792527
ABSTRACT:
The method of manufacturing a semiconductor device according to the present invention comprises the step of forming an opening in use for forming an emitter region. This step uses the independent etching characteristics of N and P type polysilicons to simplify the opening forming process, which is very complicated in the conventional method. To be more specific, the impurity doped in the first polysilicon layer at a high concentration is diffused into the second polysilicon layer adjacent to the first polysilicon layer. When the impurity doped in the first polysilicon layer is diffused into the second polysilicon layer, the diffused impurity dominantly determines the conductivity type of that portion of the second polysilicon layer, into which the impurity is diffused. Therefore, one of the first polysilicon layer and the second polysilicon layer portion is etched by a solution, independently of the other. Since they are etched independently, a desired gap can be formed between the end portion of the first plysilicon layer and the emitter electrode.
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Hearn Brian E.
Kabushiki Kaisha Toshiba
Wilczewski M.
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