Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With heat sink embedded in encapsulant
Reexamination Certificate
2008-04-29
2010-10-12
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With heat sink embedded in encapsulant
C257S341000, C257S401000
Reexamination Certificate
active
07812464
ABSTRACT:
A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.
REFERENCES:
patent: 4996583 (1991-02-01), Hatada
patent: 5103290 (1992-04-01), Temple et al.
patent: 5105536 (1992-04-01), Neugebauer et al.
patent: 5198964 (1993-03-01), Ito et al.
patent: 5455442 (1995-10-01), Neilson et al.
patent: 5625226 (1997-04-01), Kinzer
patent: 5648682 (1997-07-01), Nakazawa et al.
patent: 6215176 (2001-04-01), Huang
patent: 6249041 (2001-06-01), Kasem et al.
patent: 6256200 (2001-07-01), Lam et al.
patent: 6268651 (2001-07-01), Hellgren et al.
patent: 6307755 (2001-10-01), Williams et al.
patent: 6396127 (2002-05-01), Munoz et al.
patent: 6507116 (2003-01-01), Caletka et al.
patent: 6566164 (2003-05-01), Glenn et al.
patent: 6650004 (2003-11-01), Horie et al.
patent: 6707138 (2004-03-01), Crowley et al.
patent: 6800932 (2004-10-01), Lam et al.
patent: 60-138944 (1985-07-01), None
patent: 1-122143 (1989-05-01), None
patent: 2-133951 (1990-05-01), None
patent: 5-121615 (1993-05-01), None
patent: 8-64634 (1996-03-01), None
patent: 9-129798 (1997-05-01), None
patent: 2000082721 (2000-03-01), None
Hata Toshiyuki
Hirashima Toshinori
Kishimoto Munehisa
Takahashi Yasushi
Andújar Leonardo
Arroyo Teresa M
Mattingly & Malur, P.C.
Renesas Electronics Corporation
LandOfFree
Semiconductor device and a method of manufacturing for high... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a method of manufacturing for high..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of manufacturing for high... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4158097