Semiconductor device and a method of manufacture therefor

Details Semiconductor device and a method of manufacture therefor Semiconductor device and a method of manufacture therefor

2006-02-28

2006-02-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S650000, C257S639000, C257S640000, C257S641000, C257S760000, C257S750000, C257S751000, C257S758000, C257S747000, C438S723000, C438S724000

Reexamination Certificate

active

07005724

ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a substrate, and a graded capping layer located over the substrate, wherein the graded capping layer includes at least two different layers, wherein first and second layers of the at least two different layers have different stress values.

REFERENCES:
patent: 6091121 (2000-07-01), Oda
patent: 6100559 (2000-08-01), Park
patent: 6306758 (2001-10-01), Park
patent: 6617690 (2003-09-01), Gates et al.
patent: 2004/0061129 (2004-04-01), Saxler et al.
patent: 2004/0166603 (2004-08-01), Carley
patent: 2004/0173886 (2004-09-01), Carley

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