Semiconductor device and a method of fabricating the same

Details Semiconductor device and a method of fabricating the same Semiconductor device and a method of fabricating the same

2005-09-06

2005-09-06

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Reexamination Certificate

active

06939776

ABSTRACT:
A power MOSFET comprises: a semiconductor substrate21of a first conduction type; a drain layer22of the first conduction type and formed on a surface layer of the substrate; a gate insulating film25formed in a partial region on the drain layer22; a gate electrode26formed on the gate insulating film25; an insulating film27formed on the gate electrode; a side wall insulator28formed on side walls of the gate insulating film25, the gate electrode26, and the insulating film27; a recess formed on the drain layer22and in a region other than a region where the gate electrode25and the side wall insulator28are formed; a channel layer23of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode26is formed; a source region layer24of the one conduction type and formed on the channel layer23outside the recess; and a wiring layer29formed to cover the channel layer23which is exposed through the recess, the side wall insulator28, and the insulating film.

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