Semiconductor device and a method of fabricating the same

Details Semiconductor device and a method of fabricating the same Semiconductor device and a method of fabricating the same

1998-09-28

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438430, 438286, 257630, 257330, H01L 2358, H01L 21425

Patent

active

060487763

ABSTRACT:
A method of fabricating a semiconductor device, comprises the steps of forming a trench in a semiconductor substrate by using a selective etching process; forming an insulating layer at least on the inner surface of the trench; forming a film containing silicon at least on the insulation layer in the trench and doping a first impurity of a first conductivity type by a first ion implantation to a predetermined depth of the semiconductor substrate at least through the film containing silicon, and wherein the first impurity doped into the semiconductor substrate by the first ion implantation is at a level deeper than the bottom of the trench.

REFERENCES:
patent: 4639288 (1987-01-01), Price et al.
patent: 4766090 (1988-08-01), Coquin et al.
patent: 4840920 (1989-06-01), Suda
patent: 5258635 (1993-11-01), Nitayama et al.
patent: 5293055 (1994-03-01), Hara et al.
patent: 5410176 (1995-04-01), Liou et al.
patent: 5436189 (1995-07-01), Beasom
patent: 5578509 (1996-11-01), Fujita
Stanley Wolf Silicon Processing for the VSLI Era vol. I Lattice press pp. 306-307, 1986.
Stanley Wolf Silicon Processing for the VSLI Era vol. II Lattice press pp. 48,52,54-56, 62, 1990.
Stanley Wolf Silicon Processing for the VSLI Era vol. 2 lattice press pp. 238-239, 1990.

Affiliated with

Also associated with

Rating

Semiconductor device and a method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and a method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176102