Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-03-14
2009-08-04
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S341000, C257S401000, C257S578000, C257SE29257
Reexamination Certificate
active
07569875
ABSTRACT:
A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
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Hisanaga Yukihiro
Ishiko Masayasu
Nakagawa Hidehiro
Nishiwaki Tsuyoshi
Saito Hirokazu
Ho Tu-Tu V
Kabushiki Kaisha Toyota Chuo Kenkyusho
McGinn IP Law Group PLLC
Toyota Jidosha & Kabushiki Kaisha
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