Semiconductor device and a method for producing the same

Details Semiconductor device and a method for producing the same Semiconductor device and a method for producing the same

1992-06-24

1994-05-03

Epps, Georgia Y.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372102, H01S 308

Patent

active

053094727

ABSTRACT:
A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.

REFERENCES:
Burnham et al., Electronics Letters (Dec. 9, 1982) 18(25):1095-1097.
Turco et al., Journal of Crystal Growth (1990) 104:766-772.
Oishi et al., "MOVPE-Grown 1.5 .mu.m Distributed Feedback Laser on Corrugated InP Substrates", I.E.E.E. Journal of Quantum Electronics (1987), vol. QE-23, No. 6, pp. 822-827.
Luo et al., "Purely gain-coupled distributed feedback semiconductor lasers", Applied Physics Letters (1990), vol. 56, No. 17, pp. 1620-1622.

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