Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-11-09
1997-01-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257761, H01L 2976
Patent
active
055942598
ABSTRACT:
A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof.
REFERENCES:
patent: 3754168 (1973-08-01), Cunningham et al.
patent: 4432134 (1984-02-01), Jones et al.
patent: 4523811 (1985-06-01), Ota
patent: 4563695 (1986-01-01), Tarutani et al.
patent: 4589961 (1986-05-01), Gershenson
patent: 4673968 (1987-06-01), Hieber et al.
patent: 4860067 (1989-08-01), Jackson et al.
patent: 4954870 (1990-09-01), Takemura et al.
patent: 5264728 (1993-11-01), Ikeda et al.
Periodic Chart, Side 2, Sargent-Welch Scientific Company, 1980.
Cole et al., "Bistable Resistance Memory Cell" IBM Tech Disc Bull. vol. 15, No. 6, Nov. 1972, pp. 2015-2016.
L. G. Feinstein et al., Thin Solid Films, 16 (1973) pp. 129-145 "Factors Controlling the Structure of Sputtered Ta Films" which is cited in English text p. 2, lines 29-30.
R.O.C. Patent Publication No. 145634 w/translation, Nov. 1990.
Patent Abstracts of Japan, vol. 15, No. 108, (E-1045) 14 Mar., 1991 and JP-A-30 01 572 (Fujitsu Ltd), Jan. 8, 1991.
Dohjo et al, Proceedings of the Society For Information Display, vol. 29, No. 4, 1988, Los Angeles US, pp. 283-288.
Goto Masahito
Saito Hisashi
Shimada Yasunori
Taniguchi Koji
Bowers Courtney A.
Crane Sara W.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor device and a method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method for producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1390210