Semiconductor device and a method for producing the same

Details Semiconductor device and a method for producing the same Semiconductor device and a method for producing the same

1991-07-17

1992-11-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437249, 437226, 437 65, 148DIG12, H01L 4900

Patent

active

051642182

ABSTRACT:
A semiconductor device of vertical arrangement includes an anode region formed of a first semiconductor substrate and a second semiconductor substrate joined with the first semiconductor substrate. The first semiconductor substrate forms a high-resistance layer with a predetermined impurity density, and the second semiconductor substrate forms a low-resistance layer whose impurity density is higher than that of the high-resistance layer. A PN junction is formed inside the first semiconductor substrate. The periphery of the first semiconductor substrate including the PN junction is configured in an inverted mesa structure and coated with an insulation material. With this arrangement, the semiconductor device has a high withstand voltage and enables an employment of a large diameter wafer.

REFERENCES:
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
patent: 4968628 (1990-11-01), Delgado et al.
patent: 5089431 (1992-02-01), Slatter et al.

Affiliated with

Also associated with

Rating

Semiconductor device and a method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and a method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1170602