Semiconductor device and a method for manufacturing the same

Details Semiconductor device and a method for manufacturing the same Semiconductor device and a method for manufacturing the same

1980-07-07

1984-02-21

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 627, 204 38A, 204192D, 427 88, 427 82, 427 90, 427 91, 4271264, H01L 21283, H01L 21314

Patent

active

044330049

ABSTRACT:
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.

REFERENCES:
patent: 3716469 (1973-02-01), Bhatt
patent: 3725309 (1973-04-01), Ames
patent: 3759798 (1973-09-01), Graff
Howard et al., "Intermetallic Compounds of Al and Transition Metals: . . . ", Appl. Phys. 49(7), Jul. 1970, pp. 4083-4093.
Silvestri, "Formation of Al.sub.2 O.sub.3 From Porous Aluminum . . . ", IBM TDB, vol. 20, No. 9, Feb. 1978, pp. 3714-3716.

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