Semiconductor device and a method for manufacturing the same

Details Semiconductor device and a method for manufacturing the same Semiconductor device and a method for manufacturing the same

1981-08-04

1985-08-06

Munson, Gene M.

357 54, 357 59, 357 67, 357 71, H01L 2702, H01L 2934, H01L 2348

Patent

active

045339350

ABSTRACT:
A semiconductor device provided with a circuit resistor. The device comprises a first conductive layer overlying a semiconductor substrate, an insulation layer deposited on the first conductive layer, a second conductive layer formed on the insulation layer, and a resistor for connecting together the first and second conductive layers. The portion of the resistor which exerts resistance is provided in an opening selectively drilled in the insulation layer with a sufficient depth to contact the first conductive layer.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4246593 (1981-01-01), Bartlett
patent: 4282647 (1981-08-01), Richman
patent: 4392150 (1983-07-01), Courreges
T. Ohzone et al., "A 2K.times.8-Bit Static Ram," IEDM Digest of Technical Papers, 1978, pp. 360-363.
T. Mochizuki et al., "Film Properties of MoSi.sub.2 and Their Application to Self-Aligned MoSi.sub.2 Gate MOSFET," IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980.

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