Semiconductor device and a method for manufacturing the same

Details Semiconductor device and a method for manufacturing the same Semiconductor device and a method for manufacturing the same

1978-04-17

1980-01-22

James, Andrew J.

357 71, 357 73, H01L 2934, H01L 2330, H01L 2348

Patent

active

041852940

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an insulating layer formed on one surface of the semiconductor substrate, a wiring layer formed on at least a portion of that area of the semiconductor substrate where no insulating layer is formed and having substantially the same thickness as that of the insulating layer, an insulating film formed flat on the insulating layer and wiring layer in a manner that it occupies grooves between the insulating layer and the wiring layer, an intermediate insulating layer formed on the insulating film, and another wiring layer formed on the intermediate insulating layer. The semiconductor device has a rupture-free multi-layer structure which exhibits an excellent electrical property.

REFERENCES:
patent: 3766445 (1973-10-01), Reuter et al.
patent: 3801880 (1974-04-01), Harada et al.
patent: 3833919 (1974-09-01), Naber
patent: 3838442 (1974-09-01), Humphreys
patent: 3890636 (1975-06-01), Harada et al.
patent: 4001870 (1977-01-01), Saiki et al.
patent: 4017886 (1977-04-01), Tomono
patent: 4040083 (1977-08-01), Saiki et al.

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