Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-06-03
1998-12-08
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257380, 257903, 257904, H01L 2976, H01L 2994, H01L 2711
Patent
active
058474129
ABSTRACT:
A plurality of silicon insulating films are formed to separate regions to be formed with elements from each other on a silicon semiconductor substrate. Silicon layers are formed by an epitaxially growing method on the regions to be formed with the elements and the silicon insulating film. An MOS transistor is formed on the monocrystalline silicon layer formed on the regions to be formed with the elements of the silicon layer, and the polysilicon layer formed on the silicon insulating film is used as a high resistance element or doped with an impurity as a conductor line.
REFERENCES:
patent: 4489478 (1984-12-01), Sakurai
patent: 5087956 (1992-02-01), Ikeda et al.
Dennison et al., "A Novel MOS Device Structure with S/D Contacts Over Oxide (COO)," IEDM 85, pp. 204-207.
Kakumu Masakazu
Kinugawa Masaaki
Kabushiki Kaisha Toshiba
Loke Steven H.
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