Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-06-05
2007-06-05
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257SE23039, C257SE23042, C257SE23052, C257S685000, C257S666000, C257S723000, C257S777000, C257S728000, C257S724000, C257S725000, C257S048000, C257S673000, C257S786000, C257S784000, C257S696000, C257S698000, C365S233100
Reexamination Certificate
active
11114175
ABSTRACT:
A semiconductor device is formed by laminating two semiconductor chips with the rear surfaces thereof provided face to face. Each semiconductor chip is provided with an outer lead for clock enable to which the clock enable signal and chip select signal are individually input. On the occasion of making access to one semiconductor chip, the other semiconductor chip is set to the low power consumption mode by setting the clock enable signal and chip select signal to the non-active condition.
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Communication from Chinese Patent Office (Chinese Office Action) dated Jul. 21, 2006 w/ English translation.
Kawamura Masayasu
Masuda Masachika
Nishizawa Hirotaka
Sakuma Kazuki
Sugano Toshio
Antonelli, Terry Stout & Kraus, LLP.
Elpida Memory Inc.
Williams Alexander Oscar
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