Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2009-10-06
2011-10-11
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S230030
Reexamination Certificate
active
08036036
ABSTRACT:
A semiconductor device includes at least two adjacent memory cell blocks, each of the memory cell blocks having a plurality of memory cell units, each of memory cell units having a plurality of electrically reprogrammable and erasable memory cells connected in series, a plurality of cell gates for selecting the plurality of memory cells within the two adjacent memory cell blocks, each of the plurality of cell gates being formed with roughly rectangular closed loops or roughly U shaped open loops, each of the loops being connected to a corresponding cell of the memory cells in a corresponding memory cell unit of the plurality of memory cell units within one of the two adjacent memory cell blocks and being connected to a corresponding memory cell of the memory cells in a corresponding memory cell unit of the plurality of memory cell units within the other memory cell block of the two adjacent memory cell blocks and a plurality of pairs of first and second selection gates for selecting the memory cell block, the plurality of cell gates being located between one pair of the first and second selection gates within a corresponding block of the memory cell block.
REFERENCES:
patent: 7084440 (2006-08-01), Sel et al.
patent: 7112858 (2006-09-01), Inaba et al.
patent: 7723807 (2010-05-01), Nishiyama
patent: 2006/0046422 (2006-03-01), Tran et al.
patent: 2007/0141780 (2007-06-01), Higashitani
patent: 7-263677 (1995-10-01), None
patent: 2002-280388 (2002-09-01), None
patent: 2004-15056 (2004-01-01), None
patent: 2006-156657 (2006-06-01), None
Ho Hoai
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor device and a manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4292045