Semiconductor device and a manufacturing method thereof

Details Semiconductor device and a manufacturing method thereof Semiconductor device and a manufacturing method thereof

1993-01-21

1995-01-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 70, 437 26, 437 28, 437984, H01L 2176

Patent

active

053786505

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a main surface, an isolating insulator film formed on the main surface and having a substantially vertical side wall, a plurality of semiconductor element regions, which are separated from each other by the isolating insulator film, for forming semiconductor circuit elements therein, a first impurity region formed in the substrate to a predetermined depth from an interface between the isolating insulator film and the substrate by ion implantation, second impurity regions formed in the element regions simultaneously with the first impurity region by the ion implantation and located at a predetermined depth from the main surface, and a side wall insulator film formed by anisotropic etching on the vertical wall of the isolating insulator film.

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IBM Technical Disclosure Bulletin; vol. 16, No. 3--Aug. 1973 One-Device Storage Cell Method; A. R. LeBlanc; pp. 956 and 957.
IBM Technical Disclosure Bulletin; vol. 27, No. 3--Aug. 1984; "Sidewall-Defined Self-Aligned Reach-Up Isolation"; W. Wang; 2 sheets.

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