Semiconductor device and a manufacturing method thereof

Details Semiconductor device and a manufacturing method thereof Semiconductor device and a manufacturing method thereof

1997-07-08

1999-10-05

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 438624, 438791, H01L 2358

Patent

active

059629207

ABSTRACT:
A metal wire and a metal electrode which are composed of an aluminum alloy are formed on an interlayer insulating film composed of a silicon oxide film which is formed on the semiconductor substrate. On the entire surface of the metal wire and the metal electrode, a silicon oxide film and a silicon nitride film are formed serially, so as to compose a passivation film. A silicon nitrided-oxide layer is formed by nitriding a silicon oxide film in an area of the silicon oxide film which is the vicinity of the junction of either the metal wire or the metal electrode and the interlayer insulating film.

REFERENCES:
patent: 5393702 (1995-02-01), Yang et al.
patent: 5545919 (1996-08-01), Ueda et al.
patent: 5587344 (1996-12-01), Ishikawa
patent: 5643407 (1997-07-01), Chang

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