Semiconductor device allowing fast sensing with a low power supp

Details Semiconductor device allowing fast sensing with a low power supp Semiconductor device allowing fast sensing with a low power supp

1999-06-23

2000-11-14

Nelms, David

Static information storage and retrieval

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Plural blocks or banks

365196, 365100, G11C 800

Patent

active

06147925&

ABSTRACT:
In a shared sense amplifier structure, a bit line isolating gate connecting a selected memory block and a sense amplifier circuit is set to a high-resistance ON state when a sensing operation is performed, and the high-resistance ON state is held during a row selected state. A semiconductor memory device allowing fast access with a low power consumption is implemented.

REFERENCES:
patent: 5798976 (1998-08-01), Arimoto
"Development of 64M bit DRAM (3.sup.rd Generation)", S. Tsukada et al. NEC Technical Journal, vol. 50, No. 3, 1997, pp. 23-27.
"A 1.2-to 3.3-V Wide Voltage-Range/Low-Power DRAM with a Charge-Transfer Presensing Scheme", M. Tsukude, et al. IEEE Journal of Solid-State Circuits, vol. 32, No. 11, Nov. 1997, pp. 1721-1727.

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