Semiconductor device alignment mark having oxidation...

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks

Reexamination Certificate

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Details

C257S701000, C257S750000, C257S758000, C257S760000, C257S773000, C257S771000

Reexamination Certificate

active

06891277

ABSTRACT:
Alignment marks of a semiconductor device, formed prior to a step of applying heat treatment in an oxygen atmosphere, include an insulating film, a groove formed in the insulating film during a step of defining a contactor hole in a device part, a metal film formed at least on sidewalls of the groove during a step of burying the contactor hole in the device part, and a cover film formed on the insulating film to cover the metal film formed in the groove for prevention of oxidation of the metal film during heat treatment applied in an oxygen atmosphere.

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patent: 20030157780 (2003-08-01), Farrar et al.
patent: 20030207535 (2003-11-01), Kutsunai et al.
patent: 9-223656 (1997-08-01), None
patent: 2001-284204 (2001-10-01), None
patent: 2002-373974 (2002-12-01), None

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