Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...
Patent
1996-09-20
1998-03-31
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
257 88, 257 98, 257 99, 257368, 257390, 257750, 257758, 257773, 257296, 349 46, 349 47, 349 38, 438 40, 438 48, 438181, H01L12972, H01L 21265, G02F 1137
Patent
active
057341770
ABSTRACT:
A semiconductor device formed on an insulating substrate of the present invention includes: a gate wiring provided on the insulating substrate; a first insulating film provided so as to cover the gate wiring; an upper electrode formed so as to face the gate wiring in such a manner that the first insulating film is interposed therebetween; a second insulating film provided so as to cover the upper electrode; and another electrode formed on the second insulating film, wherein the upper electrode is electrically connected to the another electrode via a contact hole formed through the second insulating film, a storage capacitor is formed of a structure including the upper electrode, the first insulating film, and the gate wiring opposing the upper electrode through the first insulating film, the upper electrode and the gate wiring have substantially the same width.
REFERENCES:
patent: 5530266 (1996-06-01), Yonehara et al.
Sharp Kabushiki Kaisha
Wojciechowicz Edward
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