Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2008-06-03
2008-06-03
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C257SE23051, C257SE23044, C257SE23052, C257SE23101, C257SE25029, C257SE25029, C257SE25016, C257SE25030, C257S675000, C257S712000, C361S712000
Reexamination Certificate
active
07382000
ABSTRACT:
A semiconductor device is provided which comprises a connecting lead4mounted between a MOS-FET1and a regulatory IC2on a support plate3. Connecting lead4has a thermally radiative and electrically conductive substrate6and electrically insulative and thermal transfer-resistive covering7. Substrate6has one end6aproviding one main surface4aof connecting lead4which is mounted and electrically connected on the other main surface1bof MOS-FET1. Covering7provides the other main surface4bof connecting lead4for supporting regulatory IC2at one end6aof substrate6. When electric current flow is supplied to MOS-FET1through an electrified path of support plate3and substrate of connecting lead4, heat produced from operating MOS-FET4is effectively radiated through support plate3and substrate6of connecting lead4to improve thermal radiation in the semiconductor device in the layered structure of the semiconducting elements while heavy current can flow through MOS-FET1due to sufficient heat radiation.
REFERENCES:
patent: 5739581 (1998-04-01), Chillara et al.
patent: 2002/0003294 (2002-01-01), Bissey
patent: 4-93159 (1992-08-01), None
patent: 2001-110986 (2001-04-01), None
patent: 2004-6564 (2004-01-01), None
patent: 2004-146628 (2004-05-01), None
Machine translation for JP 2004-146628.
Machine translation for JP 2004-146628, May 20, 2004 date publication.
Bachman & LaPointe P.C.
Sanken Electric Co. Ltd.
Williams Alexander Oscar
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