Semiconductor device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307299R, 357 3, 357 15, 357 19, H01L 4702, H01L 2726, H01L 3116

Patent

active

040216802

ABSTRACT:
Disclosed is a bulk semiconductor device which employs a semiconductor element exhibiting negative conductivity under a high electric field. Said semiconductor element has at least two regions and at least one bridge portion and each region thereof is connected with the region adjacent thereto by a bridge portion. Means for controlling the lateral spatial growth of a high electric field domain is provided on or near each bridge portion. The growth of a high electric field domain generated in one of the regions into the adjacent region is controlled by applying a signal to said controlling means.

REFERENCES:
patent: 3365583 (1968-01-01), Gunn
patent: 3452222 (1969-06-01), Shoji
patent: 3535601 (1970-10-01), Matsukura et al.
patent: 3544914 (1970-12-01), Suga
patent: 3597625 (1971-08-01), Yanai et al.
patent: 3602734 (1971-08-01), Matsukura et al.
patent: 3651423 (1972-03-01), Sewell
patent: 3659158 (1972-04-01), Shoji
patent: 3691481 (1972-09-01), Kataoka et al.
patent: 3766372 (1973-10-01), Kataoka et al.
patent: 3918009 (1975-11-01), Claxton et al.
Chang, IBM Tech. Discl. Bull., vol. 12, No. 1, June 1969, pp. 6-8.

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