Semiconductor device

Details Semiconductor device Semiconductor device

2008-06-17

2008-06-17

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

C365S185180, C365S185240, C365S185260, C365S185270, C257S326000, C257S296000, C257S316000

Reexamination Certificate

active

07388777

ABSTRACT:
A plurality of nonvolatile memory cells that constitute a nonvolatile memory are disposed in array form. Selection MIS•FETs for memory cell selection are electrically connected every bits. Each of the nonvolatile memory cells has a MIS•FET for writing data, a MIS•FET for reading data, and a capacitance section. Gate electrodes of the MIS•FETs and a capacitance electrode of the capacitance section are constituted of part of the same floating gate electrode. A control gate electrode of the nonvolatile memory cell is formed of part of an n well to which the capacitance electrode is opposite.

REFERENCES:
patent: 5477068 (1995-12-01), Ozawa
patent: 5917751 (1999-06-01), Wakita
patent: 2001-185633 (2001-07-01), None
patent: 2001-257324 (2001-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2801960