Semiconductor device

Details Semiconductor device Semiconductor device

2008-05-13

2008-05-13

Landau, Matthew C. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257SE33043

Reexamination Certificate

active

07372077

ABSTRACT:
A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

REFERENCES:
patent: 5861636 (1999-01-01), Dutta et al.
patent: 6111277 (2000-08-01), Ikeda
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6509579 (2003-01-01), Takeya et al.
patent: 6537513 (2003-03-01), Amano et al.
patent: 6639241 (2003-10-01), Nakahara et al.
patent: 6812496 (2004-11-01), Takatani et al.
patent: 6855959 (2005-02-01), Yamaguchi et al.
patent: 2001/0032975 (2001-10-01), Yamaguchi et al.
patent: 2003/0145783 (2003-08-01), Motoki et al.
patent: 2003/0207480 (2003-11-01), Kobayashi et al.
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 2006/0097278 (2006-05-01), Goto et al.
patent: 02-181987 (1990-07-01), None
patent: 03-238888 (1991-10-01), None
patent: 08-051256 (1996-02-01), None
patent: 09-045999 (1997-02-01), None
patent: 10-093186 (1998-04-01), None
patent: 11-004048 (1999-01-01), None
patent: 11-130597 (1999-05-01), None
patent: 11-162847 (1999-06-01), None
patent: 11-191637 (1999-07-01), None
patent: 11-214798 (1999-08-01), None
patent: 11-219910 (1999-08-01), None
patent: 11-233893 (1999-08-01), None
patent: 11-312841 (1999-11-01), None
patent: 2000-044400 (2000-02-01), None
patent: 2000-183459 (2000-06-01), None
patent: 2000-307184 (2000-11-01), None
patent: 2001-102307 (2001-04-01), None
patent: 2001-148544 (2001-05-01), None
patent: 2001-257193 (2001-09-01), None
patent: 2001-267687 (2001-09-01), None
patent: 2002-33512 (2002-01-01), None
patent: 2002-033512 (2002-01-01), None
patent: 2002-184707 (2002-06-01), None
patent: 2002-368335 (2002-12-01), None
patent: 2003-69153 (2003-03-01), None
patent: 2003-124573 (2003-04-01), None
patent: 2003-133650 (2003-05-01), None
patent: 2003-229638 (2003-08-01), None
patent: 2003-243773 (2003-08-01), None
patent: 2003-273470 (2003-09-01), None
patent: 2004-22785 (2004-01-01), None
patent: 2004-23050 (2004-01-01), None
patent: WO 03/038957 (2003-05-01), None
“Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication, Characterization, and Applications,” Wilmsen et al., Cambridge University Press 1999, pp. 4 and 7.
Japanese Office Action issued in Japanese Patent Application No. JP 2004-027477, dated May 08, 2007.
Chinese Office Action with English translation issued in corresponding Chinese Patent Application No. 2004-100048488, dated Feb. 16, 2007.
Japanese Office Action with English-translation issued in corresponding Japanese Patent Application No. 2003-339421, dated Mar. 13, 2007.
Japanese Office Action with English translation, issued in corresponding Japanese Patent Application No. 2003-339421, dated Oct. 30, 2007.
Japanese Office Action, with English Translation, issued in Japanese Patent Application No. 2007-179158, dated Jan. 29, 2008.

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