Semiconductor device

Details Semiconductor device Semiconductor device

1979-11-20

1981-09-22

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 357 30, 307DIG4, H01L 2702

Patent

active

042913268

ABSTRACT:
A semiconductor device for use in a bootstrap circuit comprising: first and second MIS field effect transistors connected in series between a power supply line and ground; third and fourth MIS field effect transistors connected in series between the power supply line and ground; a capacitor connected between the gate and source of the third MIS field effect transistor, and; a fifth MIS field effect transistor connected between first and second nodes, the first node connecting the first and second MIS field effect transistors, and the gate of the third MIS transistor, the second node connecting the third and fourth MIS field effect transistors being connected to an output of the device, wherein a p-n junction portion which is connected to the capacitor is protected by a cover for preventing light from penetrating thereinto.

REFERENCES:
patent: 3903431 (1975-09-01), Heeren
patent: 4028558 (1977-06-01), Heller
patent: 4031415 (1977-06-01), Redwine
patent: 4216489 (1980-08-01), Clemens

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