Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2008-07-15
2008-07-15
Nguyen, Tuan H (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S774000
Reexamination Certificate
active
07400028
ABSTRACT:
The present invention provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film. Dummy vias are formed in each layer on a dicing region side. The dummy vias are formed at the same intervals in a matrix as viewed in a top view. Even in the case where cracking occurs at the time of dicing, the cracking can be prevented from spreading to a seal ring by the dummy vias. As a result, resistance to moisture absorbed in a circuit formation region can be improved, and deterioration in reliability can be prevented.
REFERENCES:
patent: 2004/0002198 (2004-01-01), Lee et al.
patent: 2004/0084777 (2004-05-01), Yamanoue et al.
patent: 2004/0084778 (2004-05-01), Hosoda et al.
patent: 2004/0150073 (2004-08-01), Matumoto et al.
patent: 2006/0278957 (2006-12-01), Lin et al.
patent: 2002-208676 (2002-07-01), None
Nguyen Tuan H
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
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