Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S774000

Reexamination Certificate

active

07400028

ABSTRACT:
The present invention provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film. Dummy vias are formed in each layer on a dicing region side. The dummy vias are formed at the same intervals in a matrix as viewed in a top view. Even in the case where cracking occurs at the time of dicing, the cracking can be prevented from spreading to a seal ring by the dummy vias. As a result, resistance to moisture absorbed in a circuit formation region can be improved, and deterioration in reliability can be prevented.

REFERENCES:
patent: 2004/0002198 (2004-01-01), Lee et al.
patent: 2004/0084777 (2004-05-01), Yamanoue et al.
patent: 2004/0084778 (2004-05-01), Hosoda et al.
patent: 2004/0150073 (2004-08-01), Matumoto et al.
patent: 2006/0278957 (2006-12-01), Lin et al.
patent: 2002-208676 (2002-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2781471

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.