Semiconductor device

Details Semiconductor device Semiconductor device

1989-06-08

1991-04-02

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, H01S 319

Patent

active

050051792

ABSTRACT:
A semiconductor device having a current blocking layer and confinement current passing part formed on a semiconductor layer, and an electrode metal layer disposed on said current blocking layer and confinement current passing part, wherein the current blocking layer is made of semiconductor material, and the contact resistance of current blocking layer and electrode metal layer is higher than the contact resistance of electrode metal layer and semiconductor layer, and/or the resistivity of the current blocking layer is higher than that of the semiconductor layer.

REFERENCES:
patent: 4121179 (1978-10-01), Chinowe et al.
patent: 4142160 (1979-02-01), Tsukada et al.
patent: 4740976 (1988-04-01), Kajimura et al.
Temkin et al., "The Bell System Technical Journal", InGaAsP LEDs for 1.3-.mu.m Optical Transmission, vol. 62, Jan. 1983, No. 1.

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