Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-03-22
2011-03-22
Maldonado, Julio J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000, C257S775000, C257S786000, C257SE23143, C257SE23145, C257SE23151, C257SE23152, C257SE23153, C257SE23168
Reexamination Certificate
active
07911063
ABSTRACT:
In a semiconductor device according to an aspect of the invention, a direction in which a fourth metal interconnection layer located on a semiconductor layer is extended is orthogonal to a direction in which third interconnection layers ML30and ML37located on the fourth interconnection layer are extended. Thus, even in a case where a stress is applied from outside to bonding pads BP1and BP2located above, the stress is wholly dispersed by the third interconnection layers and the fourth interconnection layer which are laminated to intersect with each other, and stress concentration on a particular point can be relieved to restrain deterioration in semiconductor device strength to a minimum. Accordingly, it is possible to provide the semiconductor device having a structure in which productivity of the semiconductor device can be improved while the stress concentration applied from outside on the particular point of the bonding pad is relieved.
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Akao Katsuhiko
Terazono Shinichi
Maldonado Julio J
McDermott Will & Emery LLP
Renesas Electronics Corporation
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