Semiconductor device

Details Semiconductor device Semiconductor device

1986-12-16

1991-04-02

Larkins, William D.

Optics: measuring and testing

Range or remote distance finding

With photodetection

356372, 357 68, H01L 23544

Patent

active

050050710

ABSTRACT:
On a film to be etched by the isotropic etching method to form electrodes, wiring layers or the like, a first mask and a second mask are provided. The first mask is used for forming the electrodes, wiring layers or the like. The second mask is used for forming a checking pattern from the film to determine the progress of etching. The second mask comprises a plurality of straight lines of different widths and at least one mark pattern indicating one of the straight lines. Upon progress of the isotropic etching, parts of the film under the narrowest and narrower straight lines of the second mask are completely etched by side etching phenomenon which proceeds under the mask with parts of the film under wider straight lines being survived. The mark of the film transferred from the mark pattern of the second mask indicates the position under a predetrmined one of the straight lines of the second mask. A worker can easily recognize whether or not the film exists at that position and determine the progress of etching.

REFERENCES:
patent: 3987418 (1976-10-01), Buchanan
patent: 4639142 (1987-01-01), Chew et al.

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