Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-22

2011-03-22

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material forms active...

C257S064000, C257SE29292

Reexamination Certificate

active

07910923

ABSTRACT:
A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap width different from that of a drift region and hetero-adjoined with the drift region, a gate insulation film, a gate electrode adjoined to the gate insulation film, a source electrode connected to a source contact portion of the hetero semiconductor regions and an outermost switch structure and a repeating portion switch structure with a drain electrode connected to a substrate region. In a conduction state, the outermost switch structure comprises a mechanism in which the current flowing at the outermost switch structure becomes smaller than the current flowing at the repeating portion switch structure.

REFERENCES:
patent: 5998833 (1999-12-01), Baliga
patent: 7436004 (2008-10-01), Shimoida et al.
patent: 1 519 419 (2005-03-01), None
patent: 2003-318398 (2005-11-01), None

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