Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-15

2008-04-15

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

Reexamination Certificate

active

07358522

ABSTRACT:
A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

REFERENCES:
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5780876 (1998-07-01), Hata
patent: 5786603 (1998-07-01), Rennie et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5793061 (1998-08-01), Ohuchi et al.
patent: 5841802 (1998-11-01), Whiteley et al.
patent: 5866440 (1999-02-01), Hata
patent: 5903017 (1999-05-01), Itaya et al.
patent: 5945689 (1999-08-01), Koike et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 5990496 (1999-11-01), Kunisato et al.
patent: 6040588 (2000-03-01), Koide et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6153894 (2000-11-01), Udagawa
patent: 6162656 (2000-12-01), Kunisato et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6288416 (2001-09-01), Koike et al.
patent: 6320893 (2001-11-01), Ueki
patent: 6326236 (2001-12-01), Koide et al.
patent: 6420733 (2002-07-01), Koide et al.
patent: 6423984 (2002-07-01), Kato et al.
patent: 6441393 (2002-08-01), Goetz et al.
patent: 6452214 (2002-09-01), Kaneyama et al.
patent: 6456640 (2002-09-01), Okumura
patent: 6518082 (2003-02-01), Kidoguchi et al.
patent: 6541293 (2003-04-01), Koide et al.
patent: 6555403 (2003-04-01), Domen et al.
patent: 6563850 (2003-05-01), Matsumoto et al.
patent: 6586762 (2003-07-01), Kozaki
patent: 6645785 (2003-11-01), Koike et al.
patent: 6657234 (2003-12-01), Tanizawa
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 6762070 (2004-07-01), Kaneyama et al.
patent: 6764870 (2004-07-01), Okumura
patent: 6821800 (2004-11-01), Koide et al.
patent: 6853009 (2005-02-01), Kato et al.
patent: 6940100 (2005-09-01), Tsujimura et al.
patent: 7015053 (2006-03-01), Kozaki et al.
patent: 7045809 (2006-05-01), Kato et al.
patent: 2002/0053676 (2002-05-01), Kozaki
patent: 2004/0018657 (2004-01-01), Koike et al.
patent: 2004/0026705 (2004-02-01), Kato et al.
patent: 0 661 782 (1995-07-01), None
patent: 0762516 (1997-03-01), None
patent: 0772249 (1997-05-01), None
patent: 0803916 (1997-10-01), None
patent: 0908988 (1999-04-01), None
patent: 1041650 (2000-10-01), None
patent: 1122841 (2001-08-01), None
patent: 1168539 (2002-01-01), None
patent: 1385241 (2004-01-01), None
patent: 2323210 (1998-09-01), None
patent: 63-152194 (1988-06-01), None
patent: 63-211784 (1988-09-01), None
patent: 02-228087 (1991-07-01), None
patent: 05-110185 (1993-04-01), None
patent: 03-166785 (1993-08-01), None
patent: 05-206513 (1993-08-01), None
patent: 06-021511 (1994-01-01), None
patent: 06-164055 (1994-06-01), None
patent: 06-268257 (1994-09-01), None
patent: 06-268332 (1994-09-01), None
patent: 07-147454 (1995-06-01), None
patent: 7-235732 (1995-09-01), None
patent: 08-111558 (1996-05-01), None
patent: 08-125281 (1996-05-01), None
patent: 08-181386 (1996-07-01), None
patent: 08-250807 (1996-09-01), None
patent: 08-293623 (1996-11-01), None
patent: 08-293643 (1996-11-01), None
patent: 08-316528 (1997-01-01), None
patent: 09-008412 (1997-01-01), None
patent: 09-036423 (1997-02-01), None
patent: 09-036430 (1997-02-01), None
patent: 09-129926 (1997-05-01), None
patent: 09-266326 (1997-10-01), None
patent: 09-293935 (1997-11-01), None
patent: 10-004210 (1998-01-01), None
patent: 10-012922 (1998-01-01), None
patent: 10-012923 (1998-01-01), None
patent: 10-012969 (1998-01-01), None
patent: 10-126006 (1998-05-01), None
patent: 10-135514 (1998-05-01), None
patent: 10-163523 (1998-06-01), None
patent: 10-163561 (1998-06-01), None
patent: 10-242512 (1998-09-01), None
patent: 10-242565 (1998-09-01), None
patent: 10-256601 (1998-09-01), None
patent: 11-054847 (1999-02-01), None
patent: 11-074607 (1999-03-01), None
patent: 11-112087 (1999-04-01), None
patent: 11-214788 (1999-08-01), None
patent: 11-274644 (1999-10-01), None
patent: 11-298090 (1999-10-01), None
patent: 11-340559 (1999-12-01), None
patent: 11-340580 (1999-12-01), None
patent: 2000-091629 (2000-03-01), None
patent: 2000-091630 (2000-03-01), None
patent: 2000-091631 (2000-03-01), None
patent: 2000-091705 (2000-03-01), None
patent: 2000-091708 (2000-03-01), None
patent: 2000-156544 (2000-06-01), None
patent: 2000-196194 (2000-07-01), None
patent: 2000-208875 (2000-07-01), None
patent: 2000-232259 (2000-08-01), None
patent: 2000-261106 (2000-09-01), None
patent: 2000-286447 (2000-10-01), None
patent: 2000-349377 (2000-12-01), None
patent: 2000-349398 (2001-02-01), None
patent: 2001-044570 (2001-02-01), None
patent: 2001-077413 (2001-03-01), None
patent: 2001-168471 (2001-06-01), None
patent: 2001-203385 (2001-07-01), None
patent: 99/16156 (1999-04-01), None
patent: WO-00/17972 (2000-03-01), None
patent: WO-00/52796 (2000-09-01), None
patent: WO-00/76004 (2000-12-01), None
patent: WO-02/080320 (2002-10-01), None
D. P. Bour et al. (2000) “Design and Performance of Asymmetric Waveguide Nitride Laser Diodes,”IEEE Journal of Quantum Electronics36(2), pp. 186-191.
Kay Domen et al. (1998) “Electron Overflow to the AlGaN p-Cladding Layer in InGaN/AlGaN MQW Laser Diodes,”MRS Internet J. Nitride Semiconduc. Res. 3(2), 5 pages.
European Search Report dated Jun. 8, 2005.
Goto, S. et al. (2001). “Improvement of Quantum Efficiency by InGaN Interlayer for Blue-violet Laser Diodes,”Extended Abstracts of the 48thSpring Meeting of The Japan Society of Applied Physics and Related Societies1(28p-E-12):369; and English Abstract.
Salvador, A. et al. (1995). “Properties of Si Doped GaN/AIGaN Single Quantum Well.”Applied Physics Letters67(22):3322-3324.
Koide et al. (1986). “Energy Band-Gap Bowling Parameter in an AlxGa1-xN Alloy, ”J. Appl. Phys.61(9):4540-4543.
Korean Opposition Notice mailed on Nov. 27, 2006. 37 pages.
Japanese Office Action mailed Mar. 13, 2007, directed at counterpart JP application No. 2002-320916.

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