Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-07-08
2008-07-08
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S016000, C257S057000, C257S913000, C257SE21318, C257SE21321, C257SE21412, C257SE21413, C257SE21414, C257SE23122
Reexamination Certificate
active
07397063
ABSTRACT:
A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon layer includes a main region serving as an active element region, and the gettering region is preferably included in the remaining portion of the silicon layer excluding the main region. Preferably, the silicon layer may include a portion serving as an active region of a thin-film transistor.
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Itoh Yasuyoshi
Motonami Kaoru
Huynh Andy
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
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