Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-08

2011-03-08

Tan, Vibol (Department: 2819)

Computer graphics processing and selective visual display system

Plural physical display element control system

Display elements arranged in matrix

C345S098000, C345S204000, C326S088000, C326S083000, C326S081000, C327S390000, C257S072000, C257S350000

Reexamination Certificate

active

07903079

ABSTRACT:
There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.

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