Semiconductor device

Details Semiconductor device Semiconductor device

1997-07-23

1998-10-13

Picardat, Kevin

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Warping of semiconductor substrate

438455, 438121, H01L 2130

Patent

active

058211543

ABSTRACT:
A semiconductor device having a plated heat sink structure is provided, in which an Au layer (5) high in thermal expansion coefficient is formed on the lower surface of a GaAs substrate (1) having a source electrode (2), a gate electrode (3) and a drain electrode (4) of a field effect transistor on the upper surface, and, a W layer (6) low in thermal expansion coefficient is formed on the lower surface of the Au layer (5). Warping of the device after mounted on a package is reduced on the ground of such a plated heat sink structure.

REFERENCES:
patent: 5045503 (1991-09-01), Kobiki et al.
patent: 5144413 (1992-09-01), Adlerstein

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