Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-08-16
2011-08-16
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE27047, C257SE29141
Reexamination Certificate
active
07999352
ABSTRACT:
A semiconductor device equipped with a metal thin film resistor is disclosed. The semiconductor device includes a second interlayer insulating film formed on a first interlayer insulating film including a formation area of a wiring pattern. Connecting holes are formed in the second interlayer insulating film corresponding to both ends of the metal thin film resistor and the wiring pattern. An upper part of each connecting hole is formed in a taper shape. A sidewall is formed on the inner wall of each connecting hole. The metal thin film resistor is formed on the second interlayer insulating film between the connecting holes, inside of each connecting hole, and on the wiring pattern.
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Notice of Rejection of Japanese Patent Application No. 2004-319641 (priority application of 2004-042683), dated Mar. 16, 2010.
Hashimoto Yasunori
Yamashita Kimihiko
Dickstein & Shapiro LLP
Ricoh & Company, Ltd.
Sandvik Benjamin P
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