Semiconductor device

Details Semiconductor device Semiconductor device

2011-04-12

2011-04-12

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257SE27100, C257SE27125

Reexamination Certificate

active

07923733

ABSTRACT:
A semiconductor device includes a semiconductor layer including a channel region, and a first region and a second region to which an impurity element is introduced to make the first region and the second region a source and a drain, a third region, and a gate electrode provided to partly overlap with the semiconductor layer with a gate insulating film interposed therebetween In the semiconductor layer, the first region is electrically connected to the gate electrode through a first electrode to which an AC signal is input, the second region is electrically connected to a capacitor element through a second electrode, the third region overlaps with the gate electrode and contains an impurity element at lower concentrations than each of the first region and the second region.

REFERENCES:
patent: 6512271 (2003-01-01), Yamazaki et al.
patent: 6531713 (2003-03-01), Yamazaki
patent: 7588970 (2009-09-01), Ohnuma et al.
patent: 2008/0062112 (2008-03-01), Umezaki
patent: 2002-152080 (2002-05-01), None
patent: WO 2006/137573 (2006-12-01), None

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