Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-09

2011-08-09

Shingleton, Michael B (Department: 2815)

Batteries: thermoelectric and photoelectric

Thermoelectric

Peltier effect device

C136S205000, C136S207000

Reexamination Certificate

active

07994414

ABSTRACT:
A semiconductor device is disclosed that can operate utilizing thermoelectric concepts. According to an embodiment, the semiconductor device can comprise: a source/drain conductor formed of a line of metal material on a substrate; a first gate conductor formed of a second line of metal material; and a second gate conductor formed of a third line of metal material, wherein the first gate conductor is disposed adjacent a first portion of the source/drain conductor at one end of the source/drain conductor and the second gate conductor is disposed spaced apart from the first gate conductor and adjacent a second portion of the source/drain conductor at the other end of the source/drain conductor. By applying current to the first gate conductor and the second gate conductor, current can be supplied from the one end of the source/drain conductor to the other end of the source/drain conductor.

REFERENCES:
patent: 4571608 (1986-02-01), Johnson
patent: P1995-0034871 (1995-12-01), None
patent: 10-2006-0037161 (2006-05-01), None

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