Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-07-19
2011-07-19
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S067000, C257S686000, C257SE27064, C257S506000
Reexamination Certificate
active
07982250
ABSTRACT:
A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer which is prepared by a process including separation of the semiconductor layer from a semiconductor substrate followed by bonding thereof over the substrate. Each of the plurality of field-effect transistors is covered with an insulating film which provides distortion of the semiconductor layer. Furthermore, the crystal axis of the semiconductor layer, which is parallel to the crystal plane thereof, is set to a channel length direction of the semiconductor layer, which enables production of the semiconductor device with high performance and low power consumption having an SOI structure.
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Godo Hiromichi
Isobe Atsuo
Okazaki Yutaka
Yamazaki Shunpei
Liu Benjamin Tzu-Hung
Ngo Ngan
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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