Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-04-12
2011-04-12
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S108000, C438S109000, C257S666000, C257SE23024
Reexamination Certificate
active
07923292
ABSTRACT:
In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.
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Kanemoto Koichi
Kikuchi Takashi
Miyazaki Chuichi
Shiotsuki Toshihiro
Lee Eugene
Miles & Stockbridge P.C.
Renesas Electronics Corporation
Spalla David
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